The Workshop will take place from September 18th to 22nd, 2017 in Nuuksio National Park, Espoo, Finland.
IWBNS is designed to maximize international scientific information exchange between academic, industrial and government scientists on challenges of growth of high quality bulk Group III nitride crystals with low concentrations of structural defects and background impurities. Seeded and unseeded bulk growth methods, low- and high-pressure, and fast/thick quasi-bulk epitaxial growth techniques will be addressed.
The IWBNS-X program will focus on the most potential approaches and related technologies such as chemical solution, fast epitaxial growth, homo-epitaxial growth, doping, surface preparation, lift-off techniques, characterization and properties (thermal, piezoelectric, optical, etc.), device fabrication and characterization of epitaxial structures grown on bulk substrates and thick freestanding hetero-epitaxial layers. Recent growth modeling and theory are of great interest.
The workshop is by invitation only.